Specific Process Knowledge/Etch/Wet Chromium Etch: Difference between revisions
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'''All measurements on this page has been made by Nanolab staff.''' | '''All measurements on this page has been made by Nanolab staff.''' | ||
[[Category: Equipment|Etch Wet Chromium]] | [[index.php?title=Category:Equipment|Etch Wet Chromium]] | ||
[[Category: Etch (Wet) bath|Chromium]] | [[index.php?title=Category:Etch (Wet) bath|Chromium]] | ||
==Wet etching of Chromium== | ==Wet etching of Chromium== | ||
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The etch rate depends on the level of surface oxidation of the chromium metal, but the standard procedure (etch at room temperature: ~22°C) the Etch rate is around 150 nm/min. | The etch rate depends on the level of surface oxidation of the chromium metal, but the standard procedure (etch at room temperature: ~22°C) the Etch rate is around 150 nm/min. | ||
PECVD SiO2 and LPCVD SiN coated wafers have been immersed in Cr etch 18 for 10min. Thickness wise: absolutely no changes (roughness after etch not measured) | |||
Normally the etch is reused, but if you need to dispose it, collect it in a bottle marked O waste. | Normally the etch is reused, but if you need to dispose it, collect it in a bottle marked O waste. | ||