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Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,186 edits
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=System calibration=
=System calibration=
After cassette transfer the system has to be calibrated with the chosen beam current profile. This is done in a mostly automated sequence with only minute input from the user.
After cassette transfer the system has to be calibrated with the chosen beam current profile. This is done in a mostly automated sequence with only minute input from the user.
=Discharge layer removal=
After exposure the discharge layer must be removed. In the case of thermal Al this is conveniently done using MIF 726, the UV developing agent found on both the “Gamma TMAH UV developer” and “TMAH manual developer” tools. The etch rate of thermal Al in MIF 726 is 30 nm/min. For etching a standard 20 nm thermal Al layer we recommend to choose a 60 s developer cycle on either tool.


=Development=
=Development=
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