Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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Users will typically have their pattern in either CIF or GDS format. The JEOL 9500 system can only expose patterns defined in the v30 format and thus as a minimum the pattern must be translated to v30. This can be done with Beamer from Genisys. In this example job we will also show how to apply a Proximity Effect Correction (PEC) to the pattern, this is also done in Beamer. | Users will typically have their pattern in either CIF or GDS format. The JEOL 9500 system can only expose patterns defined in the v30 format and thus as a minimum the pattern must be translated to v30. This can be done with Beamer from Genisys. In this example job we will also show how to apply a Proximity Effect Correction (PEC) to the pattern, this is also done in Beamer. | ||
[[File:BEAMER_setup.png|800px|center|frameless]] | |||
PEC is a complex topic and we shall only touch upon it lightly in this guide. The need for PEC arises from the fact that the high energy incident electrons to some extend will back scatter from the sample or cause secondary electrons from the sample to interact with the resist and cause a secondary exposure of the resist. On a silicon substrate this secondary exposure can lead to exposure of the resist up to 30 µm away from the incident beam. Due to this areas with dense patterns will receive a relative high secondary exposure compared to sparse patterns and thus a higher total dose. To mitigate this a Proximity Effect Correction is applied to intentionally reduce the dose on dense patterns and ensure all pattern elements receive the same dose. | PEC is a complex topic and we shall only touch upon it lightly in this guide. The need for PEC arises from the fact that the high energy incident electrons to some extend will back scatter from the sample or cause secondary electrons from the sample to interact with the resist and cause a secondary exposure of the resist. On a silicon substrate this secondary exposure can lead to exposure of the resist up to 30 µm away from the incident beam. Due to this areas with dense patterns will receive a relative high secondary exposure compared to sparse patterns and thus a higher total dose. To mitigate this a Proximity Effect Correction is applied to intentionally reduce the dose on dense patterns and ensure all pattern elements receive the same dose. | ||