Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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Resist thickness as function of spin speed on Lab Spin 2/3 can be estimated from the parameters above as y = ax^b, where y is resist thickness in nm and x is spin speed in RPM. | Resist thickness as function of spin speed on Lab Spin 2/3 can be estimated from the parameters above as y = ax^b, where y is resist thickness in nm and x is spin speed in RPM. | ||
=Discharge layer application= | ==Discharge layer application== | ||
Electron beam exposure of non-conductive substrates will lead to a rapid and local build up of electrons and hence a build up of charge that will deflect the incident beam and distort the pattern writing. Non-conductive substrates can be coated with a metal film to provide sufficient conductance. A typical way to do this is to apply a 20 nm thermally evaporated Al layer on top of the resist layer. Please do not apply metals from e-beam evaporation sources as this process will to some extend exposure the resist with electrons from the metal evaporation process. Al is preferred due to its low atomic mass and hence minimum amount of forward beam scattering and also since it is very easy to etch away after e-beam exposure. | Electron beam exposure of non-conductive substrates will lead to a rapid and local build up of electrons and hence a build up of charge that will deflect the incident beam and distort the pattern writing. Non-conductive substrates can be coated with a metal film to provide sufficient conductance. A typical way to do this is to apply a 20 nm thermally evaporated Al layer on top of the resist layer. Please do not apply metals from e-beam evaporation sources as this process will to some extend exposure the resist with electrons from the metal evaporation process. Al is preferred due to its low atomic mass and hence minimum amount of forward beam scattering and also since it is very easy to etch away after e-beam exposure. | ||