Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs: Difference between revisions
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|} | |} | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 85-90 <sup>o</sup> | |~ 85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
| Line 64: | Line 64: | ||
|- | |- | ||
|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
|- | |- | ||
|} | |} | ||
| Line 76: | Line 76: | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 90 <sup>o</sup> | |~ 90<sup>o</sup> | ||
|- | |- | ||
|Selectivity (GaAs:SiO<sub>2</sub>) | |Selectivity (GaAs:SiO<sub>2</sub>) | ||
| Line 110: | Line 110: | ||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
|- | |- | ||
|} | |} | ||
| Line 122: | Line 122: | ||
|- | |- | ||
|Sidewall angle | |Sidewall angle | ||
|85-90 <sup>o</sup> | |85-90<sup>o</sup> | ||
|- | |- | ||
|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||