Specific Process Knowledge/Lithography/Pretreatment/Oven 250C: Difference between revisions
Created page with "=Oven 250C= 300x300px|thumb|Oven 250C for pretreatment in Cx-1 The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven. The user manual, and contact information can be found..." |
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[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg| | [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|400px|thumb|Oven 250C for pretreatment in Cx-1]] | ||
The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven. | The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven. | ||
Latest revision as of 14:45, 17 March 2025
Oven 250C
The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven.
The user manual, and contact information can be found in LabManager:
Oven 250C - requires login