Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant | *~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant | ||
*~25 nm/min (Thermal oxide) in 5%HF | *~25 nm/min (Thermal oxide) in 5%HF | ||
*~6 nm/min (Thermal oxide) in 1%HF | |||
*~3-4µm/min in 40%HF | *~3-4µm/min in 40%HF | ||
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