Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*PECVD nitride: ~40.0-100.0 nm/min | *PECVD nitride: ~40.0-100.0 nm/min | ||
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'') | *Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')--> | ||
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*Probably betweeb 20-300 nm/min depending on the process parameters | *Probably betweeb 20-300 nm/min depending on the process parameters | ||