Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
Reet (talk | contribs)
Line 2: Line 2:


==Test of the deposition rate of Silicon and film characteristics==
==Test of the deposition rate of Silicon and film characteristics==
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012'''''
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 with followup by Berit Herstrøm @DTU Nanolab.'''''
Please note that it is no longer possible to deposit Si with the Ion beam etcher here at Nanolab.
 
{| border="2" cellspacing="1" cellpadding="3" align="left"
{| border="2" cellspacing="1" cellpadding="3" align="left"
! 
! 

Revision as of 13:36, 22 January 2024

Feedback to this page: click here

Test of the deposition rate of Silicon and film characteristics

The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 with followup by Berit Herstrøm @DTU Nanolab. Please note that it is no longer possible to deposit Si with the Ion beam etcher here at Nanolab.

  Recipe 2 - with the small grids)
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 240mA
Power setting 700W
I(B) 200mA
V(B) 1100V
Vacc(B) 400V


Results with recipe 2 and the small grids

Depostion time 10 min (2016-08-04 bghe)
Characterization method Ellipsometer 3 angles
Deposition thickness 50 nm (2016-08-04 bghe)
Deposition rate 5.0 nm/min
Refractive index @632nm

n=?
k=?

Refractive index @1000nm

@950nm using the ellipsometer

n=?
k=?

Refractive index @1550nm

n=?
k=?



Recipe

  Recipe 1 - with the large grids)
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 320mA
Power 700W
I(B) 280mA
V(B) 1100V
Vacc(B) 400V


Results with recipe 1 and the large grids

Depostion time 10 min (before 2013) 30 min (before 2013) 30 min (before 2013) 30 min (2013-10-4)
Characterization method FilmTek FilmTek Ellipsometer 3 angles Ellipsometer 3 angles
Deposition thickness 71 nm 229 nm 242 nm 194 nm (2013-10-4)
Deposition rate 7.1 nm/min 7.6 nm/min 8.1 nm/min 6.5 nm/min
Refractive index @632nm

n=4.55
k=0.826

n=4.916
k=0.547

n=4.589
k=0.479

n=4.625
k=0.653

Refractive index @1000nm

@950nm using the ellipsometer

n=?
k=?

n=4.297
k=0.0836

n=4.136
k=0.189

n=4.206
k=0.183

Refractive index @1550nm

n=?
k=?

n=?
k=?

n=?
k=?

n=3.970
k=0.062

Roughness 6.1 nm 10.4 nm 1.1 nm 0.9 nm