Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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*<nowiki>#</nowiki>1 150mm wafer | *<nowiki>#</nowiki>1 150mm wafer | ||
*<nowiki>#</nowiki>1 200mm wafer | *<nowiki>#</nowiki>1 200mm wafer | ||
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!Allowed materials | |||
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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===Comparison of Chromium Etch Methods=== | |||
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![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
![[Specific_Process_Knowledge/Etch/DRIE/Pegasus/Pegasus-2|Pegasus 2]] | |||
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!General description | |||
|Wet etch of Cr premixed (Chrome etch 18) | |||
|Dry plasma etch of Cr | |||
|Sputtering of Cr - pure physical etch | |||
|Primarily shallow etching of silicon but also thin layers of SiO2, TaO2 and Cr | |||
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!Etch rate range | |||
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*~150nm/min at room temperature | |||
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*~14 nm/min (depending on features size and etch load) | |||
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*~30nm/min (not tested yet) | |||
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* very slow | |||
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!Etch profile | |||
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*Isotropic | |||
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*Anisotropic (vertical sidewalls) | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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*Anisotropic (vertical sidewalls) | |||
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!Substrate size | |||
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*Any size and number that can go inside the beaker in use | |||
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*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers) | |||
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers) | |||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
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Revision as of 13:01, 7 April 2026
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Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Chromium Etch Methods
| Cr wet etch | ICP metal | IBE (Ionfab300+) | |
|---|---|---|---|
| Generel description | Wet etch of Cr premixed (Chrome etch 18) | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch |
| Etch rate range |
|
|
|
| Etch profile |
|
|
|
| Substrate size |
|
|
Smaller pieces glued to carrier wafer
|
| Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|
Comparison of Chromium Etch Methods
| Cr wet etch | ICP metal | IBE (Ionfab300+) | Pegasus 2 | |
|---|---|---|---|---|
| General description | Wet etch of Cr premixed (Chrome etch 18) | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch | Primarily shallow etching of silicon but also thin layers of SiO2, TaO2 and Cr |
| Etch rate range |
|
|
|
|
| Etch profile |
|
|
|
|
| Substrate size |
|
|
Smaller pieces glued to carrier wafer
|
|
| Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|