Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
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|Etch rate in Silicon nitride (low stress) | |Etch rate in Silicon nitride (low stress) | ||
|9. | |9.1 nm/min (2013-05-27 BGHE and Matthias F. Carnoy) | ||
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|Etch rate DUV resist | |Etch rate DUV resist | ||
|13. | |13.4 nm/min (2013-05-27 BGHE and Matthias F. Carnoy) | ||
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[[image:Silicon-IBE-good-b17.jpg|300x300px|thumb|center|Silicon etch in IBE with good corner definition. Small hare ears are obvious at the structure edge. Substrate etched with Beam current=400mA, Beam voltage=600V, Beam acceleration Voltage=400V, and Stage angle=5°]] | [[image:Silicon-IBE-good-b17.jpg|300x300px|thumb|center|Silicon etch in IBE with good corner definition. Small hare ears are obvious at the structure edge. Substrate etched with Beam current=400mA, Beam voltage=600V, Beam acceleration Voltage=400V, and Stage angle=5°]] | ||
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[[image:Silicon-IBE-bad-b21.jpg|300x300px|thumb|center|Silicon etch in IBE with rounded corners. Large hare ears with | [[image:Silicon-IBE-bad-b21.jpg|300x300px|thumb|center|Silicon etch in IBE with rounded corners. Large hare ears with rippling's are seen at the structure edge. Substrate etched with Beam current=500mA, Beam voltage=500V, Beam acceleration Voltage=500V, and Stage angle=10°]] | ||
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