Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions
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==CD Bias== | ==CD Bias== | ||
[[Image:MLA3_5214E_3umLS_bias.JPG|400x400px|thumb|The effect of applying CD Bias during conversion on Aligner: Maskless 03. Data and graph by Thomas Anhøj | [[Image:MLA3_5214E_3umLS_bias.JPG|400x400px|thumb|The effect of applying CD Bias during conversion on Aligner: Maskless 03. Data and graph by Thomas Anhøj @ DTU Nanolab, 2023.]] | ||
The size after development of the structures printed on Aligner: Maskless 03 is not necessarily 1:1 with the design. Tests have shown that 3µm lines of resist printed in positive resist using quality mode on Aligner: Maskless 03 resist are 0.4-0.8µm too narrow, i.e. the exposed and subsequently developed area is wider than in the design. The bias is a function of the dose, and gets bigger with higher dose. It is also different for different resists. At the dose that appears to give the best resolution for AZ 5214E, the bias is 0.7µm, while it is approximately 0.45µm for MiR 701. | The size after development of the structures printed on Aligner: Maskless 03 is not necessarily 1:1 with the design. Tests have shown that 3µm lines of resist printed in positive resist using quality mode on Aligner: Maskless 03 resist are 0.4-0.8µm too narrow, i.e. the exposed and subsequently developed area is wider than in the design. The bias is a function of the dose, and gets bigger with higher dose. It is also different for different resists. At the dose that appears to give the best resolution for AZ 5214E, the bias is 0.7µm, while it is approximately 0.45µm for MiR 701. | ||