Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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|Etch rate | |Etch rate | ||
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|Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | | | ||
*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | |||
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|Process volume | |Process volume | ||
| Line 39: | Line 40: | ||
*4" wafers | *4" wafers | ||
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4" wafers or smaller pieces | *4" wafers or smaller pieces | ||
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|} | |} | ||