Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Barc Etch

Barc etch with O2

Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab, June 2020

Sample

• 6" Si
• 2 µm SiO2 from C1
• 90 nm barc
• 907 nm UVN 2030-0,5
• Reticle: Pegreticle
• Dose: 200 J/m2

Pegasus 4 settings

• Recipe: Barc O2
• With 30 mm spacers

SEM images after barc etching

• C06207_02 Barc O2 30s
• 
  50% load, 4000 nm pitch, barc has been etched with a little undercut
• 
  50% load, 2000 nm pitch, barc has been etched with a little undercut
• 
  75% load, 1600 nm pitch, barc has been etched with a little undercut
• 
  50% load, 400 nm pitch, barc has been etched with a little undercut expect where the lines have collided
• 
  50% load, 1300 nm pitch
• 
  50% load, 800 nm pitch