Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
Appearance
| Line 196: | Line 196: | ||
== Process development == | == Process development == | ||
===Etch of nano sized structures=== | ===Etch of nano sized structures=== | ||
{{Template:Author-bghe-thissection}} | |||
*See pxnano2 and comparison with nanotech on the Pegasus: [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2]] | *See pxnano2 and comparison with nanotech on the Pegasus: [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2]] | ||
Older work: | Older work: | ||
Three different examples of etch are shown here. The masking material was zep520A (80 nm). | Three different examples of etch are shown here. The masking material was zep520A (80 nm). | ||
{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||