Specific Process Knowledge/Lithography/Baking: Difference between revisions
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Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C. | Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C. | ||
The user manual, and contact information can be found in LabManager: | |||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=336 Hotplate: 90-110C] - '''requires login''' | |||
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Revision as of 15:53, 2 February 2023
This section, including all images and pictures, is created by DTU Nanolab staff unless otherwise stated.
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Comparing baking methods
Spray coater hotplate | SU-8 hotplates 1, 2 & 3 | Small benchtop hotplates | Gamma hotplates | Oven: 110C - 250C | Oven 250C | |
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Purpose |
Adjustable temperature, contact bake
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Programmable, ramped contact bake
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Hotplate: 90-110C:
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Recipe dependent temperature, contact or proximity bake
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Manual convection bake
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Manual convection bake
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Temperature |
Maximum 180°C Temperature with top-plate: Actual surface temperature = 0.9 * display value |
Maximum 110°C |
Hotplate: 90-110C:
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Fixed at various recipe dependent temperatures |
110 - 250°C Return to 110°C after use |
Fixed at 250°C |
Substrate size |
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Allowed materials |
All substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types except type IV |
Hotplate dependent. (All substrates and film or pattern of all types, unless otherwise noted on the hotplate) |
Silicon and glass substrates |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist| |
Restrictions (Not allowed) |
III-V, copper, steel substrates
Pb, Te films |
Hotplate dependent. Any restrictions will be noted on the hotplate. |
III-V, low Tg polymer, copper, steel substrates | III-V, low Tg polymer, copper, steel substrates
Resist is not allowed | ||
QC |
https://labmanager.dtu.dk/view_binary.php?type=data&mach=293 |
Hotplate 1: Hotplate 2: Hotplate 3: |
Hotplate: 90-110C: Spin coater: Labspin 02: Spin coater: Labspin 03: |
Spincoater: Gamma ebeam & UV: Spincoater: Gamma UV: Developer: TMAH UV-lithography: Spincoater: Süss stepper: Developer: Stepper:
|
Hotplates
Hotplate: 90-110C
Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.
The user manual, and contact information can be found in LabManager:
Hotplate: 90-110C - requires login
SU-8 hotplates 1, 2 & 3
We have three dedicated SU-8 hotplates in C-1 and E-4.
Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 180°C.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8) Hotplate 3 (SU8)
Small benchtop hotplates
Model: Präzitherm PZ 28-2.
Contact bake only. Maximum temperature is hotplate dependent.
Most of these hotplates have been fitted with a top-plate in order to protect the original hotplate surface. With the top-plate, the set point of the controller must be adjusted in order to achieve the correct temperature during the bake:
Actual surface temperature = 0.9 * display value
Gamma hotplates
Hotplate temperatures are recipe dependent.
Information about the Süss MicroTec Gamma tools can be found in labadviser:
- Spin Coater: Süss Stepper
- Developer: TMAH Stepper
- Developer TMAH UV-lithography
- Spin Coater: Gamma UV
- Spin Coater: Gamma e-beam & UV
Ovens
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Oven: 110C - 250C
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.
The set-point can be varied, but should always be returned to 110°C after use.
The user manual, and contact information can be found in LabManager: Oven: 110C - 250C
Oven 250C for pretreatment
See Oven 250C