Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions

← Older edit Newer edit →

VisualWikitext

Revision as of 15:42, 2 February 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,178 edits →Proximity Effect Correction (PEC) ← Older edit		Revision as of 15:55, 2 February 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,178 edits →Proximity Effect Correction (PEC) Newer edit →
Line 76:		Line 76:


	PEC is calculated based on a Point Spread Function (PSF). The PSF is a model of the radial energy distribution when taking backscatter electrons into account. In Beamer the PSF will look similar to the plot below that shows the cummulative radial energy PSF for a silicon substrate covered byt ~~100~~ nm resist exposed at 100 kV. Notice that the x-axis is logarithmic and in this case extends to about 30 µm from the center of the beam. The red part of the curve indicates beam spread due to forward scattering through the resist.		PEC is calculated based on a Point Spread Function (PSF). The PSF is a model of the radial energy distribution when taking backscatter electrons into account. In Beamer the PSF will look similar to the plot below that shows the cummulative radial energy PSF for a silicon substrate covered byt 200 nm resist exposed at 100 kV. Notice that the x-axis is logarithmic and in this case extends to about 30 µm from the center of the beam. The red part of the curve indicates beam spread due to forward scattering through the resist.