Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
| Line 26: | Line 26: | ||
*Purging | *Purging | ||
*Cooling | *Cooling | ||
The top and bottom heaters of the VPO module are typically set to 120°C. The wafer is baked under a low vacuum (~0.35 bar) in order to heat and dehydrate the wafer before HMDS application. The HMDS is injected into the process chamber using nitrogen as a carrier gas. 10 liters per minute of dry nitrogen is bubbled through liquid HMDS before flowing into the chamber. The injection lasts until ambient pressuer is reached in the chamber. After the reaction time, the chamber is purged using nitrogen. Finally, the wafer is cooled on the cool plate. | The top and bottom heaters of the VPO module are typically set to 120°C. The wafer is baked under a low vacuum (~0.35 bar) in order to heat and dehydrate the wafer before HMDS application. The HMDS is injected into the process chamber using nitrogen as a carrier gas. 10 liters per minute of dry nitrogen is bubbled through liquid HMDS before flowing into the chamber. The injection lasts until ambient pressuer is reached in the chamber. After the reaction time, the chamber is purged using nitrogen. Finally, the wafer is cooled on the cool plate. | ||