Specific Process Knowledge/Thin film deposition/Deposition of CrSi: Difference between revisions
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It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | ||
<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths=" | <gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="400px" heights="350px" perrow="2"> | ||
image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | ||
image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | ||