Jump to content

Specific Process Knowledge/Characterization/XRD/Process Info: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 44: Line 44:
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="300px" heights="250px" perrow="1">
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="300px" heights="250px" perrow="1">
image:eves_2theta_scan_concept_20230131.png|<b>C 1s</b> signal.
image:eves_2theta_scan_concept_20230131.png|<b>C 1s</b> signal.
</gallery>
=RSM (Reciprocal Space Map) measurements=
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="1300px" heights="500px" perrow="1">
image:eves_RSM_scan_concept_20230131.png|<b>C 1s</b> signal.
</gallery>
</gallery>


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization/XRD/Process_Info"