Specific Process Knowledge/Characterization/XRD/Process Info: Difference between revisions
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The following measurements types are just some of the options you have on the [http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab Rigaku SmartLab] | The following measurements types are just some of the options you have on the [http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab Rigaku SmartLab] | ||
=Types of scans in the reciprocal space= | ==Types of scans in the reciprocal space== | ||
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="700px" heights="500px" perrow="1"> | <gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="700px" heights="500px" perrow="1"> | ||
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A theta-2theta scan can be used for identifying peaks and hence lattice constants and possible crystal orientations. It will also be possible to say something about the materials of the crystal, but it is not suitable for identification of composition. If a multilayers structure is present a simulation of the structure and comparison to the measurement can help identify layer thicknesses, atomic ratios, and interface roughnesses. | A theta-2theta scan can be used for identifying peaks and hence lattice constants and possible crystal orientations. It will also be possible to say something about the materials of the crystal, but it is not suitable for identification of composition. If a multilayers structure is present a simulation of the structure and comparison to the measurement can help identify layer thicknesses, atomic ratios, and interface roughnesses. | ||
==Rocking courve (ω scan)== | |||
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="400px" heights="300px" perrow="1"> | <gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="400px" heights="300px" perrow="1"> | ||