Specific Process Knowledge/Characterization/XRD/Process Info: Difference between revisions
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==Rocking curve== | ==Rocking curve== | ||
=Rocking courve (omega scan)= | |||
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="300px" heights="250px" perrow="1"> | |||
image:eves_omega_scan_concept_20230131.png|<b>C 1s</b> signal. | |||
</gallery> | |||
A rocking curve is measured by fixing the 2Theta angle and changing the incident angle omega, which is the same as rocking the sample in the setup. This can be used to determine the preferred orientation and the degree of orientation of the measured material. For a perfect crystal and rocking curve will show a single sharp peak, if the layers are not perfect crystalline the diffraction peak will broaden. | A rocking curve is measured by fixing the 2Theta angle and changing the incident angle omega, which is the same as rocking the sample in the setup. This can be used to determine the preferred orientation and the degree of orientation of the measured material. For a perfect crystal and rocking curve will show a single sharp peak, if the layers are not perfect crystalline the diffraction peak will broaden. | ||
If an epitaxial layer is grown on a preface substrate, and the sample alignment is done to the substrate peak, a shift in omega will indicate a tilt in the crystal planes. A broadening could mean a dislocations, mosaicity, or curvature of the sample. | If an epitaxial layer is grown on a preface substrate, and the sample alignment is done to the substrate peak, a shift in omega will indicate a tilt in the crystal planes. A broadening could mean a dislocations, mosaicity, or curvature of the sample. | ||