Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
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Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7<sup>o</sup> with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below). | Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7<sup>o</sup> with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below). | ||
<gallery caption="Anisotropic wet silicon etch: dependency on crystal orientation" widths=" | <gallery caption="Anisotropic wet silicon etch: dependency on crystal orientation" widths="760px" heights="150px" perrow="1"> | ||
Image:KOH- | Image:KOH-etch.JPG|Etched profile when etching Si(100) and when etching Si(110) respectively | ||
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