Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

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*up to 2000 SCCM

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|style="background:LightGrey; color:black"|O<sub>2

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*up to 2000 SCCM

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|style="background:LightGrey; color:black"|NH<sub>3

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*up to 2000 SCCM

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|style="background:LightGrey; color:black"|5% H₂/Ar

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*up to 2000 SCCM

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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Pressure

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*0^o - 100^o

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|style="background:LightGrey; color:black"|Controller

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*up to 12 mbar

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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates

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*Single-wafer process

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|style="background:LightGrey; color:black"|Substrate size

*Chips on carrier

*100 mm or 150 mm wafers

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| style="background:LightGrey; color:black"|Allowed materials

*Silicon Nitride

*Aluminum Oxide

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