Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions
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The furnace is being tested. | The furnace is being tested. | ||
== | ==General Purpose Annealing furnace (C2)== | ||
The III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes. | The C2 furnace has fromt September 2024 become a general purpose Annealing furnace. It means that it can be used for annealing of different samples and different materials. | ||
A permission from the Thin Film group is required, before samples are annealed in the furnace. | |||
III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes. | |||
The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded. | The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded. | ||