Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
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===Definition of <110> alignment structures=== | ===Definition of <110> alignment structures=== | ||
The etch rate dependence on the crystallographic planes can be used to determine the <110> crystal directions with high precision (better than +/- 0.05 <sup>o</sup>). A fast method for doing this, using the symmetric under-cutting behavior around but not at the <110>-directions, was described by Vangbo and Bäcklund | The etch rate dependence on the crystallographic planes can be used to determine the <110> crystal directions with high precision (better than +/- 0.05 <sup>o</sup>). A fast method for doing this, using the symmetric under-cutting behavior around but not at the <110>-directions, was described by https://iopscience.iop.org/article/10.1088/0960-1317/6/2/011/meta. [[https://iopscience.iop.org/article/10.1088/0960-1317/6/2/011/meta|Mattias Vangbo and Ylva Bäcklund 1996 J. Micromech. Microeng. '''6''', 279-284]] High-precision control of the <110>-direction during alignment can be necessary in order to control the dimensions of KOH-etched structures (e.g. precise control of V-groove dimensions). | ||
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