Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
No edit summary |
|||
| Line 7: | Line 7: | ||
==Phosphorus Pre-dep furnace (A4)== | ==Phosphorus Pre-dep furnace (A4)== | ||
[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1]] | [[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>. | The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>. | ||