Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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| ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | | ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | ||
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| '''200nm nanoholes''' || | | '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|400px]][[File:nanoHoles 0g 05 v2.jpg|400px]][[File:nanoHoles 0g 05 v2.jpg|400px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process. | ||
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