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| {{Template:Nexsa-addpubrow | | {{Template:Nexsa-addpubrow |
| |LMdocID= | | |LMdocID=5400 |
| |LMdocTitle= | | |LMdocTitle=Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions |
| |LMdocType= | | |LMdocType=Publication |
| |LMdocAuthor= | | |LMdocAuthor=R Steinberger |
| | |docLink=https://doi.org/10.1016/j.apsusc.2017.03.163 |
| | |XPSused=x |UPSused= |ISSused=x |REELSused= |Ramanused= |
| | |AdditionalOption=AES, ARXPS, sputter profiles |
| | |Sample=Oxygen on metal surfaces |
| | |Abstract=Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contaminationare essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, stateof-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way. |
| | }} |
| | |
| | {{Template:Nexsa-addpubrow |
| | |LMdocID=5401 |
| | |LMdocTitle=Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO<sub>3</sub> Powders |
| | |LMdocType=Publication |
| | |LMdocAuthor=E Symianakis |
| | |docLink=https://doi.org/10.1021/acs.jpcc.5b02742 |
| | |XPSused=x |UPSused= |ISSused=x |REELSused= |Ramanused= |
| | |AdditionalOption=XRD |
| | |Sample=Catalysts, LaMnO3 |
| | |Abstract=LaMnO3 powder synthesized by glycine combustion synthesis with the rhombohedral and orthorhombic structures has been characterized by the combination of low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS), while the electrocatalytic activity for the oxygen reduction reaction is measured with the rotating disk electrode (RDE) method. Quantification of the surface terminations obtained by LEIS suggests that the orthorhombic LaMnO3 crystallites are near thermodynamic equilibrium as surface atomic ratios compare well with those of equilibrium morphologies computed by a Wulff construction based on computed surface energies. Both rhombohedral and orthorhombic structures present the same La/Mn atomic ratio on the surface. Electrochemical activity of the two structures is found to be the same within the error bar of our measurements. This result is in disagreement with results previously reported on the activity of the two structures obtained by the coprecipitation method [Suntivich et al. Nat. Chem. 2011, 3 (7), 546], and it indicates that the preparation method and the resulting surface termination might play a crucial role for the activity of perovskite catalysts. |
| | }} |
| | |
| | {{Template:Nexsa-addpubrow |
| | |LMdocID=5402 |
| | |LMdocTitle=The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy |
| | |LMdocType=Publication |
| | |LMdocAuthor=M Wiesing |
| |docLink= | | |docLink= |
| |XPSused= |UPSused= |ISSused= |REELSused= |Ramanused= | | |XPSused=x |UPSused=x |ISSused=x |REELSused= |Ramanused= |
| | |AdditionalOption=Ar sputtering |
| | |Sample=TiAlN |
| | |Abstract=The thermal oxidation of TiAlN hard coatings deposited by High Power Pulsed Magnetron Sputtering (HPPMS) is investigated at room temperature and 800 K at oxygen pressures ranging from 10−6 to 10−2 Pa by means of in situ X-ray and Ultraviolet Photoelectron Spectroscopy as well as Low Energy Ion Scattering. The spectra reveal that oxygen binds selectively to titanium during the initial chemisorption step and simultaneously some oxygen is dissolved into subsurface layers, which stay metallic. Enhanced oxidation results into continuous formation of a multilayered oxide film including oxynitride TiAl(O,N) as a metastable reaction product buried below an oxidic top layer. This top layer is either composed of mixed TiAlO after oxidation at 800 K or of segregated TiO2 and Al2O3 when oxidizing at 293 K. Additionally, evaluation of UV-valence bands reveals nitrogen doping of the surface oxide films. The results are of high relevance for tailoring of the surface characteristics of TiAlN after deposition, for the design of TiAlN multilayers and for an improved understanding of the interactions of gas particles with these coatings. |
| | }} |
| | |
| | {{Template:Nexsa-addpubrow |
| | |LMdocID=5396 |
| | |LMdocTitle=Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy |
| | |LMdocType=Publication |
| | |LMdocAuthor= L. S. Liao |
| | |docLink=https://doi.org/10.1063/1.126713 |
| | |XPSused=x |UPSused= |ISSused= |REELSused=x |Ramanused= |
| | |AdditionalOption= |
| | |Sample=Polymer |
| | |Abstract=The electronic structure of poly(9,9-dioctylfluorene) PFO!film on a Au-coated Si substrate was investigated by ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). From the UPS measurement, we obtained the ionization potential (Ip) of the PFO film, Ip =55.60 +/-0.05 eV. From the XPS shake-up peaks of the C1score level, we estimated the electron energy band gap (Eg) of the film, Eg = 53.10 +/-0.10 eV. By comparing the Eg with the optical absorption gap, we found that the value of Eg is closer to the optical absorption maximum than to the optical absorption edge. Therefore, we suggest that the optical absorption maximum may be a better approximation than the optical absorption edge in estimating Eg. |
| | }} |
| | |
| | {{Template:Nexsa-addpubrow |
| | |LMdocID=5395 |
| | |LMdocTitle=Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS |
| | |LMdocType=Publication |
| | |LMdocAuthor=Y. R. Denny |
| | |docLink=https://doi.org/10.1016/j.elspec.2011.12.004 |
| | |XPSused=x |UPSused= |ISSused= |REELSused=x |Ramanused= |
| |AdditionalOption= | | |AdditionalOption= |
| |Sample= | | |Sample= |
| |Abstract= | | |Abstract=The electronic and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass substrates were investigated using X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). XPS results show that HIZO, GIZO, and IZO thin films have mixed metal and oxide phases. REELS spectra reveal that the band gaps of GIZO, HIZO, and IZO thin films are 3.1 eV, 3.5 eV, and 3.0 eV, respectively. These band gaps are consistent with optical band gaps determined by UV-Spectrometer. The optical properties represented by the dielectric function ε, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the GIZO, HIZO and IZO thin films were determined from a quantitative analysis of REELS spectra. The transmission coefficient was increased by 4% for the HIZO compound incorporating Hf into IZO, but decreased by 3% for the GIZO compound incorporating Ga into IZO in the visible region in comparison to that of IZO. |
| }} | | }} |
|
| |
| | [[media:Steinberger-2017-Oxygen-accumulation-on-metal-surfac.pdf | Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions]]||Publication||R Steinberger||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000401391900023 link]||X||||X||||||AES, ARXPS, sputter profiles||Oxygen on metal surfaces||<span title="Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contaminationare essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, stateof-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way."> Abstract</span>
| |
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| |
| | [[media:Symianakis-2015-Electrochemical-characterization-an.pdf | Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders]]||Publication||E Symianakis||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/full_record.do?product=WOS&search_mode=CitingArticles&qid=283&SID=F6P8vdNQigRKywglhCq&page=1&doc=3 link]||X||||X||||||XRD||Catalysts, LaMnO3||<span title="LaMnO3 powder synthesized by glycine combustion synthesis with the rhombohedral and orthorhombic structures has been characterized by the combination of low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS), while the electrocatalytic activity for the oxygen reduction reaction is measured with the rotating disk electrode (RDE) method. Quantification of the surface terminations obtained by LEIS suggests that the orthorhombic LaMnO3 crystallites are near thermodynamic equilibrium as surface atomic ratios compare well with those of equilibrium morphologies computed by a Wulff construction based on computed surface energies. Both rhombohedral and orthorhombic structures present the same La/Mn atomic ratio on the surface. Electrochemical activity of the two structures is found to be the same within the error bar of our measurements. This result is in disagreement with results previously reported on the activity of the two structures obtained by the coprecipitation method [Suntivich et al. Nat. Chem. 2011, 3 (7), 546], and it indicates that the preparation method and the resulting surface termination might play a crucial role for the activity of perovskite catalysts."> Abstract</span>
| |
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| |
| | [[media:Wiesing-2016-The-thermal-oxidation-of-tialn-high.pdf | The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy]]||Publication||M Wiesing||[https://apps-webofknowledge-com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000399031000003 link]||X||X||X||||||Ar sputtering||TiAlN||<span title="The thermal oxidation of TiAlN hard coatings deposited by High Power Pulsed Magnetron Sputtering (HPPMS) is investigated at room temperature and 800 K at oxygen pressures ranging from 10−6 to 10−2 Pa by means of in situ X-ray and Ultraviolet Photoelectron Spectroscopy as well as Low Energy Ion Scattering. The spectra reveal that oxygen binds selectively to titanium during the initial chemisorption step and simultaneously some oxygen is dissolved into subsurface layers, which stay metallic. Enhanced oxidation results into continuous formation of a multilayered oxide film including oxynitride TiAl(O,N) as a metastable reaction product buried below an oxidic top layer. This top layer is either composed of mixed TiAlO after oxidation at 800 K or of segregated TiO2 and Al2O3 when oxidizing at 293 K. Additionally, evaluation of UV-valence bands reveals nitrogen doping of the surface oxide films. The results are of high relevance for tailoring of the surface characteristics of TiAlN after deposition, for the design of TiAlN multilayers and for an improved understanding of the interactions of gas particles with these coatings. "> Abstract</span>
| |
| |-
| |
| | [[media:Liao-2000-Electronic-structure-and-energy-ban.pdf | Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy]]||Publication||L S Liao||[https://apps-webofknowledge-com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000087557100028 link]||X||X||||||||||Polymer||<span title="The electronic structure of poly(9,9-dioctylfluorene) PFO!film on a Au-coated Si substrate was investigated by ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). From the UPS measurement, we obtained the ionization potential (Ip) of the PFO film, Ip =55.60 +/-0.05 eV. From the XPS shake-up peaks of the C1score level, we estimated the electron energy band gap (Eg) of the film, Eg = 53.10 +/-0.10 eV. By comparing the Eg with the optical absorption gap, we found that the value of Eg is closer to the optical absorption maximum than to the optical absorption edge. Therefore, we suggest that the optical absorption maximum may be a better approximation than the optical absorption edge in estimating Eg."> Abstract</span>
| |
| |-
| |
| | [[media:Denny-2012-Electronic-and-optical-properties-o.pdf | Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS]]||Publication||Y R Denny||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000301684300004 link]||X||||||X||||||||<span title="The electronic and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass substrates were investigated using X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). XPS results show that HIZO, GIZO, and IZO thin films have mixed metal and oxide phases. REELS spectra reveal that the band gaps of GIZO, HIZO, and IZO thin films are 3.1 eV, 3.5 eV, and 3.0 eV, respectively. These band gaps are consistent with optical band gaps determined by UV-Spectrometer. The optical properties represented by the dielectric function ε, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the GIZO, HIZO and IZO thin films were determined from a quantitative analysis of REELS spectra. The transmission coefficient was increased by 4% for the HIZO compound incorporating Hf into IZO, but decreased by 3% for the GIZO compound incorporating Ga into IZO in the visible region in comparison to that of IZO."> Abstract</span>
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| Please don't hesitate to contact us if you find a relevant article to include in the table. Or if any of the articles listed is not suitable. | | Please don't hesitate to contact us if you find a relevant article to include in the table. Or if any of the articles listed is not suitable. |
Overview of the processing options on the XPS Nexsa
The acquisition of an instrument like the Nexsa has to be done through a EU tender process. As a somewhat unexpected result of this process, we were offered the Nexsa at a very favorable price. We were therefore able to squeeze all but one of the available options into the budget. That is, of course, very nice indeed, but it also means that we will have to investigate the applications of the various techniques as there is no applications waiting for a specific technique to become available.
We have therefore compiled the table below that contains articles and application notes in which several of the available techniques are used
The columns contain the following information (excluded are the columns where the content is evident):
- Title: Click on the title to access a pdf version of the article/application note.
- Web of Science: Click here to access the article in the Web of Science database (log on to WoS via DTU Inside in advance, click this link ). This will enable you to browse the cited references and citations of the article.
- Abstract: Hover the mouse over the text to show the abstract of the article.
Template:Nexsa-addpubrow
| Publication
|
Techniques and hardware applied
|
Sample types/Materials
|
Abstract: Hover cursor to show
|
| Title (The link requires login)
|
Type
|
Author
|
Link
|
XPS
|
UPS
|
ISS
|
REELS
|
Raman
|
Additional options/hardware
|
| [1]
|
|
|
[ link]
|
|
|
|
|
|
|
|
Abstract
|
| Multitechnique Surface Characterization of Organic LED Material |
Application note |
P Mack |
|
X |
X |
|
X |
|
|
Organic LED's |
Abstract
|
| Advantages of coincident XPS-Raman in the analysis of mineral oxides species |
Application note |
|
|
X |
|
|
|
X |
|
TiO2, CaCO3 |
|
| Spectroscopic analysis of solid oxide fuel cell material with XPS |
Application note |
P Mack |
|
X |
|
|
|
|
|
|
|
| Rapid XPS image acquisition using SnapMap |
Application note |
R Simpson |
|
X |
|
|
|
|
SnapMap |
|
|
| Composition, coverage and band gap analysis of ALD-grown ultra thin films |
Application note |
P Mack |
|
X |
|
X |
X |
|
Band gap |
Gate dielectrics, HfO2, SiO2 |
|
| Confirming the layer structure of an organic FET device |
Application note |
P Mack |
|
X |
|
|
|
|
MAGCIS |
Organic FET's, |
|
| Surface analysis of zeolites: An XPS, variable kinetic energy XPS, and low energy ion scattering study
|
Publication
|
SR Bare
|
link
|
x
|
|
x
|
|
|
|
Zeolites, Metal oxides
|
Abstract
|
| Surface composition analysis by low-energy ion scattering
|
Publication, background
|
H H Brongersma
|
link
|
|
|
x
|
|
|
|
|
Abstract
|
| Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
|
Publication
|
W Cabrera
|
link
|
x
|
|
x
|
|
|
TEM
|
HfO2, InGaAs, ALD
|
Abstract
|
| Low energy ion scattering (LEIS). A practical introduction to its theory, instrumentation, and applications
|
Publication, review
|
C V Cushman
|
link
|
|
|
x
|
|
|
|
|
Abstract
|
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
|
Publication
|
S McDonnell
|
link
|
|
|
x
|
|
|
AFM, ALD
|
HfO2, MoS2
|
Abstract
|
| Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS
|
Publication
|
S Prusa
|
link
|
|
|
x
|
|
|
|
Graphene
|
Abstract
|
| Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
|
Publication
|
H C Shin
|
link
|
x
|
|
|
x
|
|
Valence band
|
HfZrO4
|
Abstract
|
| Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions
|
Publication
|
R Steinberger
|
link
|
x
|
|
x
|
|
|
AES, ARXPS, sputter profiles
|
Oxygen on metal surfaces
|
Abstract
|
| Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders
|
Publication
|
E Symianakis
|
link
|
x
|
|
x
|
|
|
XRD
|
Catalysts, LaMnO3
|
Abstract
|
| The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy
|
Publication
|
M Wiesing
|
[ link]
|
x
|
x
|
x
|
|
|
Ar sputtering
|
TiAlN
|
Abstract
|
| Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy
|
Publication
|
L. S. Liao
|
link
|
x
|
|
|
x
|
|
|
Polymer
|
Abstract
|
| Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS
|
Publication
|
Y. R. Denny
|
link
|
x
|
|
|
x
|
|
|
|
Abstract
|
Please don't hesitate to contact us if you find a relevant article to include in the table. Or if any of the articles listed is not suitable.
