Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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Name PECVD4: PRO CVD <br> | Name PECVD4: PRO CVD <br> | ||
Vendor: SPTS <br> | Vendor: SPTS <br> | ||
[[image:PECVD3a.jpg|300x300px|right|thumb|PECVD3 - positioned in cleanroom A-1]] | [[image:PECVD3a.jpg|300x300px|right|thumb|PECVD3 - positioned in cleanroom A-1, photo: DTU Nanolab internal]] | ||
[[image:PECVD4.JPG|300x300px|right|thumb|PECVD4 - positioned in cleanroom B-1]] | [[image:PECVD4.JPG|300x300px|right|thumb|PECVD4 - positioned in cleanroom B-1, photo: DTU Nanolab internal]] | ||
We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | ||