Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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|Silicon Nitride | | | ||
*Silicon Nitride | |||
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*Aluminium | *Aluminium | ||
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|Etch rate | |||
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|Size of substrate | |||
|4" and 6" in our standard bath | |||
|4" in our standard bath | |||
|4" (or smaller with carrier) | |||
|6" (when it is set up for 6") and 4" (or smaller if you have a carrier) | |||
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|Process volume | |||
|25 wafers at a time | |||
|25 wafers at a time | |||
|One wafer at a time | |||
|One wafer at a time | |||
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Revision as of 08:33, 1 November 2007
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
- KOH etch
- Wet PolySilicon etch
Dry etches:
- Dry etch using RIE1 or RIE2
- Dry etch using ASE
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
KOH | PolySilicon etch | RIE | ASE | |
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What is it good for: |
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Possible masking materials: |
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Etch rate | ||||
Size of substrate | 4" and 6" in our standard bath | 4" in our standard bath | 4" (or smaller with carrier) | 6" (when it is set up for 6") and 4" (or smaller if you have a carrier) |
Process volume | 25 wafers at a time | 25 wafers at a time | One wafer at a time | One wafer at a time |