Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer, and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe. With pillars and holes, the BARC was etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. The nanoholes had two different approaches, starting with 260 minutes on the III-V ICP. However, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2. | The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer, and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe. With pillars and holes, the BARC was etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. The nanoholes had two different approaches, starting with 260 minutes on the III-V ICP. However, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2. | ||
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{| border="1" style="text-align: center; width: 900px; height: 200px" | {| border="1" style="text-align: center; width: 900px; height: 200px" | ||
|+ '''Samples profile before going for the ORE process:''' | |+ '''Samples profile before going for the ORE process:''' | ||