Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=Al<sub>2</sub>O<sub>3</sub> mask= | =Al<sub>2</sub>O<sub>3</sub> mask= | ||
[[File:esq met Al2O3 compact.jpg|300px|right|thumb|'''''Scheme of the sample fabrication using Al<sub>2</sub>O<sub>3</sub> mask. These samples were coated with either 50 or 100 nm of Al<sub>2</sub>O<sub>3</sub>, followed by 65 nm of BARC and 750 nm of DUV resist. Not at scale. | [[File:esq met Al2O3 compact.jpg|300px|right|thumb|'''''Scheme of the sample fabrication using Al<sub>2</sub>O<sub>3</sub> mask. These samples were coated with either 50 or 100 nm of Al<sub>2</sub>O<sub>3</sub>, followed by 65 nm of BARC and 750 nm of DUV resist. Not at scale. Scheme: Maria Farinha, @DTU Nanolab''''']] | ||
In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | ||