Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

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*Good selectivity to photoresist
*Good selectivity to photoresist
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|Possible masking materials:
|Silicon Nitride
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*Photoresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Chromium (ONLY RIE2!)
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*Photoresist
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*Silicon Oxide
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*Silicon Nitride
*Aluminium
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Revision as of 11:26, 30 October 2007

Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:

Wet etches:

  • KOH etch
  • Wet PolySilicon etch

Dry etches:

  • Dry etch using RIE1 or RIE2
  • Dry etch using ASE

Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon

KOH PolySilicon etch RIE ASE
What is it good for:
  • Anisotropic etch in the <100>-plan
  • High selectivity to the other plans
  • Isotropic etch in Silicon and Polysilicon
  • Can etch isotropic and anisotropic depending on the process parameters
  • Anisotropic etch: vertical sidewalls independent on the crystal plans
  • As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
  • Good selectivity to photoresist
Possible masking materials: Silicon Nitride ?
  • Photoresist
  • Silicon Oxide
  • Silicon Nitride
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Photoresist
  • Silicon Oxide
  • Silicon Nitride
  • Aluminium