Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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Prior to exposure a pattern must be prepared for exposure. The original pattern must be provided in GDS format. Depending on requirements and complexity level pattern preparation will involve all or subset of the following steps. | Prior to exposure a pattern must be prepared for exposure. The original pattern must be provided in GDS format. Depending on requirements and complexity level pattern preparation will involve all or subset of the following steps. | ||
*Placement preparation | |||
*Alignment preparation | *Alignment preparation | ||
*Bulk and sleeve separation | *Bulk and sleeve separation | ||
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*Field sorting | *Field sorting | ||
*Export for writing | *Export for writing | ||
== Placement preparation == | |||
Pattern placement is a bit different compared to UV mask design convention and different to how our Heidelberg MLA systems work. Pattern placement is very dependent on the boundary box of the design. All patterns are placed using the '''ARRAY''' command and they are placed with respect to the center of the design boundary box. This is illustrated below. Layer 1 is a design nicely centered around (0,0) with a symmetric bounding box. If placed by the '''ARRAY''' command at (0,0) this will come out entirely as expected. Layer 2 is however offset from (0,0) and if exported with its local bounding box and placed by the '''ARRAY''' command with no offset, it will be exposed at the center of the substrate. | |||
== Alignment preparation == | == Alignment preparation == | ||