Specific Process Knowledge/Lithography/SU-8: Difference between revisions
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'''Puddle development:''' | '''Puddle development:'''<br> | ||
Puddle development can be done in the Spin coater: gamma ebeam & UV using one of the predefined development sequences. The development is a puddle development, and it requires that the substrate does not have an through holes - if the substrate has | Puddle development can be done in the Spin coater: gamma ebeam & UV using one of the predefined development sequences. The development is a puddle development, and it requires that the substrate does not have an through holes - if the substrate has | ||
'''Immersion development:'''<br> | '''Immersion development:'''<br> | ||
Immersion development can be done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|Developer SU-8]] | Immersion development can be done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|Developer SU-8]]: | ||
#The development time is dependent on the layer thickness. Minimum development time in "First" bath is 1 min per 20 µm resist film thickness | #The development time is dependent on the layer thickness. Minimum development time in "First" bath is 1 min per 20 µm resist film thickness | ||
#After development the substrate must be rinsed with IPA on both sides for ~30 sec. White traces during rinsing indicates incomplete development of SU-8 | #After development the substrate must be rinsed with IPA on both sides for ~30 sec. White traces during rinsing indicates incomplete development of SU-8 | ||