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==Spinning==
==Spinning==
SU-8 resist is designed to produce low defect coatings over a very broad range of films thickness.  
SU-8 resist is designed to produce low defect coatings over a very broad range of films thickness. [[Specific Process Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]] is dedicated to spin all SU-8 resist formulations.


[[Specific Process Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]] is dedicated to spin all SU-8 resist formulations, but one of the [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|manual spin coaters]] can also be used.


To keep clean room safe and odor free during the spinning please follow the following simple rules:
'''Safety rules:'''<br>
* Always use point exhaust above the place you handle the resist.
To keep the cleanroom safe and odor free during the spinning, please follow the following rules:
* When you move the wafers to the dedicated hot plates always carry them in a closed container.
* Always use point exhaust above the place, where you handle the resist
* When you move the wafers to the dedicated hotplates, always carry them in a closed container


The recommended coating condition:
 
* Dispense manually from bottle/syringe for the thin resists or use a syringe dispense system for the thick resists.
'''Recommenced spin coating conditions:'''<br>
* Use static dispense; approximately 1 ml of SU-8 per inch substrate diameter.
* Dispense manually from bottle/syringe for the thin resists or use a syringe dispense system for the thick resists
* For SU-8 layers thicker then 100 um use two/step spin coating procedure:
* Use static dispense; approximately 1 ml of SU-8 per inch of substrate diameter
** spread cycle 500rpm, 100rpm/s, 5 sec following by  
* For SU-8 layers thicker then 100 um use two-step spin coating procedure:
** 5 second spread cycle 500 rpm, acceleration 100 rpm/s, following by:
** thickness definition cycle with the final spin speed
** thickness definition cycle with the final spin speed
** layer uniformity of the thick films can be improved by using a rotation cover (Gyrset), but remember the speed limitation 3000rpm.
** layer uniformity of the thick films can be improved by using a rotation cover (Gyrset), but remember the speed limitation is then 3000 rpm
* For SU-8 layers thinner then 10um the spread cycle can be omitted to improve the uniformity of the films.
* For SU-8 layers thinner then 10 um the spread cycle can be omitted to improve the uniformity of the films
 
Here are the spinning curves for SU-8 2002 and SU-8 2005 (for the old KS Spinner).
[[media:Spinning_curves.xls|Spinning curves for SU-8 2002 and 2005.]]


* A rotation cover (Gyrset) can be also used in case you will spin less than 1um resit
** 3000rpm, 300rpm/s, 30sec with gyrset gives appx. 850nm with SU-8 2002 (the test done by Thomas Buss from Nanotech).


* Another way to get a thinner layer is dilute SU-8 2002 in cyclopentanone solution (25ml SU-8 in 80ml cyclopentanone) gives 120nm layer with 7000rpm spinning (the test done by Irene Fernandez-Cuesta and Nimi Gopalakrishnan from Nanotech).
'''Spin curves:'''
Spin curves for SU-8 2002 and SU-8 2005 (from the old KS Spinner): [[media:Spinning_curves.xls|Spinning curves for SU-8 2002 and 2005.]]


* To achieve a thickness between 80nm and 60nm dilute SU-8 2002 in cycopentanone in proportion 5ml SU-8 to 32 ml cyclopentanone. This test is done by Luca Pietrobon from Nanotech. See the spinning curves here. [[media:5ml_SU8_2002_in32ml_cycl.PNG|Diluted SU8 2002.]]
* A rotation cover (Gyrset) can be also used in case you need to spin less than 1 um resist film
** 3000 rpm, 300 rpm/s, 30 sec with gyrset gives approximately 850 nm film thickness, when using SU-8 2002
* Another way to get a thinner film is to dilute SU-8 2002 in cyclopentanone solution
** 120 nm film: dilute 25 ml SU-8 2002 in 80 ml cyclopentanone, spin at 7000 rpm
** 60-80 nm film: dilute 5 ml SU-8 2002 in 32 ml cyclopentanone, spin at 2000 - 7000 rpm


==Baking==
==Baking==
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