Specific Process Knowledge/Lithography/MiR: Difference between revisions
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*PEB temperature: 110°C | *PEB temperature: 110°C | ||
*PEB time: 60 s | *PEB time: 60 s | ||
During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time. | During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time. | ||