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| ==Previous work on RTP Annealsys==
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| ===General Description===
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| [[File:Test samples.png|700px|thumb|right|Schematic representation of the different types of test samples. The drawing is not to scale. The depth in Type III samples varies between 300 nm and 400 nm. The native silicon oxide on Type V samples was stripped before processing, using a BHF with surfactant bath (12% HF with ammonium fluoride etching mixture).]]
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| ====Experiments Overview====
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| Considering the available process gases, various types of RTP were studied, such as rapid thermal annealing '''(RTA)''', hydrogenation '''(RTH)''', oxidation '''(RTO)''', vacuum '''(RTV)''' and Black Si smoothing '''(Clean BSi)'''. In addition, it was developed a sequence for tool calibration.
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| ====Test Samples====
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| Various test samples were used, which are represented on the right. Type I, II and III samples are 1 cm x 1 cm chips. Type IV and V are 150 mm Si <100> n-type wafers, with grown BSi and without native oxide, respectively.
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| ==== Type of characterization ====
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| The structural characterization was mainly carried out by scanning electron microscopy, although ellipsometry has also been used. The scanning electron microscope (SEM) was a Zeiss Supra 40VP SEM, serial number 4825 and the ellipsometer a variable angle spectroscopic ellipsometry (VASE) M2000XI-210 from J.A. Woollam Co., Inc.
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| ===Processes in detail===
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| ==== Argon RTA ====
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| Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table.
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| {| border="1" style="text-align: center" cellspacing="3" cellpadding="5" align="left"
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| |+ '''Argon RTA experiments and correspondent process parameters'''
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| |-
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| !style="background:LightGray" | Sample ID
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| !style="background:LightGray" |Gas
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| !style="background:LightGray" |Flow (SCCM)
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| !style="background:LightGray" |Temperature (<sup>o</sup>C)
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| !style="background:LightGray" |Power (%)
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| !style="background:LightGray" |Pressure (mbar)
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| !style="background:LightGray" |Time (s)
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| !style="background:LightGray" |HF dip
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| !style="background:LightGray" |Position
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| |-
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| !style="background:LightGray" | RTA 1
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| |Ar||40||1328||80||12||180||No||Up
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| !style="background:LightGray" | RTA 2
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| |Ar
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| |40
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| |1305
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| |80
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| |0.18
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| |180
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| |No
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| |Up, covered
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| |-
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| !style="background:LightGray" |RTA 3
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| |Ar
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| |40
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| |1244
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| |80
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| |0.18
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| |60
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| |No
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| |Up, covered
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| |-
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| !style="background:LightGray" |RTA 4
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| |Ar
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| |40
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| |1307
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| |80
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| |0.18
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| |8
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| |No
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| |Up
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| |-
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| !style="background:LightGray" |RTA 5
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| |Ar
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| |40
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| |1308
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| |80
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| |0.18
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| |60
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| |No
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| |Up
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| |-
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| !style="background:LightGray" |RTA 6
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| |Ar
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| |40
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| |1309
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| |80
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| |0.18
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| |180
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| |No
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| |Up
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| |-
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| !style="background:LightGray" |RTA 7
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| |Ar
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| |40
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| |1246
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| |80
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| |0.18
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| |60
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| |No
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| |Flipped
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| |-
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| !style="background:LightGray" |RTA 8
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| |Ar
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| |40
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| |1248
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| |80
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| |0.18
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| |60
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| |Yes
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| |Flipped
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| |-
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| !style="background:LightGray" |RTA 9
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| |Ar
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| |40
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| |1244
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| |80
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| |0.18
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| |60
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| |No
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| |Up
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| |-
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| |}
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| <br clear = "all" />
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| '''Up''' = Facing the chamber; '''Up, covered''' = facing the chamber, covered with an identical (in size) Si chip during the process;
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| '''Flipped''' = Facing the carrier wafer; '''HF dip''' = 30s-HF chemical bath, immediately prior to processing.
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| ‘RTA 1’ experiment aimed to study the influence of RTA sequences on chromium (Cr). As such, type I samples were used, before the Cr hard-mask removal. The results are shown on the right.
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| ==== RTH ====
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| ==== Hydrogen/Argon RTA ====
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| ==== Clean BSi ====
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| ==== RTO ====
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| ==== RTV ====
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| ==== Tool Calibration ====
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| ==== Additional Discussion====
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| '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20https://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/RTP_Annealsys click here]'''
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