Jump to content

Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

Indiogo (talk | contribs)
Indiogo (talk | contribs)
Line 195: Line 195:
|-
|-
|}
|}


'''Up''' = Facing the chamber; '''Up, covered''' = facing the chamber, covered with an identical (in size) Si chip during the process; '''Flipped''' = Facing the carrier wafer; '''HF dip''' = 30s-HF chemical bath, immediately prior to processing.
'''Up''' = Facing the chamber; '''Up, covered''' = facing the chamber, covered with an identical (in size) Si chip during the process; '''Flipped''' = Facing the carrier wafer; '''HF dip''' = 30s-HF chemical bath, immediately prior to processing.


==== RTH ====
==== RTH ====
{| border="1" style="text-align: center" cellspacing="3" cellpadding="5"  align="left"
|-
!style="background:LightGray" | Sample ID
!style="background:LightGray" |Gas
!style="background:LightGray" |Flow (SCCM)
!style="background:LightGray" |Temperature (<sup>o</sup>C)
!style="background:LightGray" |Power (%)
!style="background:LightGray" |Pressure (mbar)
!style="background:LightGray" |Time (s)
!style="background:LightGray" |HF dip
!style="background:LightGray" |Position
|-
!style="background:LightGray" | RTA 1
|Ar||40||1328||80||12||180||No||Up
|-
!style="background:LightGray" | RTA 2
|Ar
|40
|1305
|80
|0.18
|180
|No
|Up, covered
|-
!style="background:LightGray" |RTA 3
|Ar
|40
|1244
|80
|0.18
|60
|No
|Up, covered
|-
!style="background:LightGray" |RTA 4
|Ar
|40
|1307
|80
|0.18
|8
|No
|Up
|-
!style="background:LightGray" |RTA 5
|Ar
|40
|1308
|80
|0.18
|60
|No
|Up
|-
!style="background:LightGray" |RTA 6
|Ar
|40
|1309
|80
|0.18
|180
|No
|Up
|-
!style="background:LightGray" |RTA 7
|Ar
|40
|1246
|80
|0.18
|60
|No
|Flipped
|-
!style="background:LightGray" |RTA 8
|Ar
|40
|1248
|80
|0.18
|60
|Yes
|Flipped
|-
!style="background:LightGray" |RTA 9
|Ar
|40
|1244
|80
|0.18
|60
|No
|Up
|-
|}
==== Hydrogen/Argon RTA ====
==== Hydrogen/Argon RTA ====
==== Clean BSi ====
==== Clean BSi ====