Jump to content

Specific Process Knowledge/Lithography/Descum: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,871 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,871 edits
Line 170: Line 170:
=Plasma asher 3=
=Plasma asher 3=


Plasma Asher 3 is specially used for control descum process after lithography. Please notice that you only can process one 4 inch wafer or one small sampel at a time.
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
Machine is equipped with 2 gaslines: oxygen and nitrogen, but all tests run with oxygen as recommended by Diener.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).


'''Ashing of  AZ MiR701 resist'''


You can use different strategy planing your descum: you can change power settings or you can vary chamber pressure during descum.
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.


''Testing different power settings''


[[image:AZMIR701_power_settings.png|right|frame|400x400px| Descum results for different power settings]]
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]


Recipe settings:
'''Recipe settings:'''
Kept oxygen and pressure settings constant at Oxygen: 5 sccm under process; Pressure: 0,2mbar and vary power.
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied


Experiment parameters:
 
'''Experiment parameters:'''
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Line 201: Line 205:
<br clear="all" />
<br clear="all" />


''Testing different pressure settings''


Recipe settings:
'''Testing different pressure settings:'''
Kept power setting constant at Power: 100% and vary oxygen flow during process.
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]


[[image:AZMIR701_pressure_settings.png|right|frame|400x400px| Descum results for different pressure settings]]
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)




Experiment parameters:
'''Experiment parameters:'''
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Line 222: Line 229:
|}
|}
|}
|}
<br clear="all" />
<br clear="all" />


'''Ashing of AZ5214E resist'''
'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]


[[image:AZ5214E_pressure_settings.png|right|frame|400x400px| Descum results for different pressure settings]]


Recipe settings:
'''Recipe settings:'''
Kept power setting constant at Power: 100% and vary oxygen flow during process.
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)




Experiment parameters:
'''Experiment parameters:'''
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"