Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions
| Line 99: | Line 99: | ||
Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. | Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. | ||
{| border="1" | {| border="1" cellspacing="3" cellpadding="10" align="left" | ||
|- | |- | ||
!width="25%" |Sample ID | !width="25%" |Sample ID | ||