Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
New page: Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are: ===Wet etches:=== *KOH etch *Wet PolySilicon etch ===Dry etches:=== *Dry etch... |
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*Dry etch using RIE1 or RIE2 | *Dry etch using RIE1 or RIE2 | ||
*Dry etch using ASE | *Dry etch using ASE | ||
==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | |||
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! KOH | |||
! PolySilicon etch | |||
! RIE | |||
! ASE | |||
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| What is it good for: | |||
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*Anisotropic etch in the <100>-plan | |||
*High selectivity to the other plans | |||
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*Isotropic etch in Silicon and Polysilicon | |||
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*Can etch isotropic and anisotropic depending on the process parameters | |||
*Anisotropic etch: vertical sidewalls independent on the crystal plans | |||
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*As RIE but better for high aspect ratio etching and deep etches (higher etch rate) | |||
*Good selectivity to photoresist | |||
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