Specific Process Knowledge/Lithography/Descum: Difference between revisions
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==Descum results== | ==Descum results== | ||
=== | ===Plasma asher 1=== | ||
[[image:Descum Results aug 2019.png|right|frame|400x400px| Descum results plasma asher 1. September 2019]] | [[image:Descum Results aug 2019.png|right|frame|400x400px| Descum results plasma asher 1. September 2019]] | ||
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager].''' | |||
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | ||
'''Recipe 1:'''<br> | |||
Note: Plasma asher was cold before use | Note: Plasma asher was cold before use | ||
*O2 flow: 70 ml/min | |||
*N2 flow: 70 ml/min | |||
*Power: 150 W | |||
{| border="1" cellspacing="1" cellpadding="2" align="center" | |||
|- style="background:LightGrey" | |||
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 | |||
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|'''Etched Thickness (nm)'''|| 14.2 || 16.3 || 47.6 || 123.2 || 854.3 || 862.1 | |||
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{| {{table}} | {| {{table}} | ||
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[[image:PA1_descum.jpg|right|frameless|400x400px| Different resist descum results plasma asher 1. August 2021]] | [[image:PA1_descum.jpg|right|frameless|400x400px| Different resist descum results plasma asher 1. August 2021]] | ||
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier. | Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier. | ||
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'''1,5 um AZ5214E resist placed horizontally in the carrier''' | '''1,5 um AZ5214E resist placed horizontally in the carrier''' | ||
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'''1,5 um AZ701MiR resist''' | '''1,5 um AZ701MiR resist''' | ||
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