Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions
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Various test samples were used, which are represented on the right. Type I, II and III samples are 1 cm x 1 cm chips. Type IV and V are 150 mm Si <100> n-type wafers, with grown BSi and without native oxide, respectively. | Various test samples were used, which are represented on the right. Type I, II and III samples are 1 cm x 1 cm chips. Type IV and V are 150 mm Si <100> n-type wafers, with grown BSi and without native oxide, respectively. | ||
=== Type of characterization === | |||
The structural characterization was mainly carried out by scanning electron microscopy, although ellipsometry has also been used. The scanning electron microscope (SEM) was a Zeiss Supra 40VP SEM, serial number 4825 and the ellipsometer a variable angle spectroscopic ellipsometry (VASE) M2000XI-210 from J.A. Woollam Co., Inc. | |||
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