Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
| Line 66: | Line 66: | ||
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier) | |'''11-13 nm/min (10% load, 4" wafer on 6" carrier) | ||
|- | |- | ||
|Etch rate of Mir resist | |Etch rate of Mir resist | ||
|'''~nm/min | |'''~nm/min | ||
|'''~17 nm/min | |'''~17 nm/min | ||