Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 276: | Line 276: | ||
==Etching Si without back side cooling== | ==Etching Si without back side cooling== | ||
{{Template:Author-bghe-thissection}} | |||
Etching in an ICP as the ASE without backside cooling normally results in heating up the sample to more than 100 degrees Celsius. This can be problematic especially when using resist as a masking material. <br> | Etching in an ICP as the ASE without backside cooling normally results in heating up the sample to more than 100 degrees Celsius. This can be problematic especially when using resist as a masking material. <br> | ||