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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 61: Line 61:
|'''13.7-14.7 nm/min [4" on carrier]
|'''13.7-14.7 nm/min [4" on carrier]


|-
|Etch rate in Si
|'''ñm/min
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier)
|-
|-
|Etch rate of Mir resist]
|Etch rate of Mir resist]
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