Revision as of 08:51, 27 January 2023

The slow etch

The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape

Parameter	Recipe name: Slow Etch	Recipe name: Slow Etch2
Coil Power [W]	350	200
Platen Power [W]	25	50
Platen temperature [^oC]	20	20
H2 flow [sccm]	15	15
CF₄ flow [sccm]	30	30
Pressure [mTorr]	3	10

Typical results	Slow Etch	Slow Etch2
Etch of SRN	~43nm/min [measured 39-50 nm/min over a 6" wafer]
Etch rate of Si3N4	~49nm/min [4" on carrier]
Etch rate of SiO2	~42nm/min [41-43 nm/min over a 6" wafer]
Etch rate of DUV resist]	~nm/min
Profile [^o]

Map of etch rate measurements
Etch rate map of SiO2 etch on 6" wafer
Etch rate map of SRN etch on 6" wafer

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 !Typical results
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 |Etch rate of Si3N4
 |'''~49nm/min [4" on carrier]
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