Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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 #'''Substrate pretreatment''': In many processes it is recommended to <u>[[Specific_Process_Knowledge/Lithography/Pretreatment|pretreat or prime]]</u> your wafer before spin-coating. In some <u>[[Specific_Process_Knowledge/Lithography/Coaters|spin-coaters]]</u>, these pretreatment processes are included in the spin coating of resist.
 #'''Resist Type''': Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU Nanolab can be found <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist|on this page]]</u>.
-##Positive tone resist: Resist exposed to UV light will be dissolved in the developer. For mask aligners, the mask openings are an exact copy of the resist pattern which is to remain on the wafer.
+#*Positive tone resist: Resist exposed to UV light will be dissolved in the developer. For mask aligners, the mask openings are an exact copy of the resist pattern which is to remain on the wafer.
-##Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. For mask aligners, the mask openings are an ''inverse'' copy of the resist pattern which is to remain on the wafer.
+#*Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. For mask aligners, the mask openings are an ''inverse'' copy of the resist pattern which is to remain on the wafer.
 #'''Thickness of resist''': In general, it is recommended to work at, or below, an aspect ratio of ~1, i.e. where the feature sizes of the pattern, is larger than the thickness of the resist. Furthermore, when you decide on the resist thickness, consider which transfer you need:
-##For <u>[[Specific_Process_Knowledge/Lithography/LiftOff|lift-off]]</u> processes, we recommend resist thickness at least 5 times larger than the thickness of the metal to be lifted.
+#*For <u>[[Specific_Process_Knowledge/Lithography/LiftOff|lift-off]]</u> processes, we recommend resist thickness at least 5 times larger than the thickness of the metal to be lifted.
-##For dry etch or wet etch processes, investigate the resist etch rate of your process, as this might limit the ''minimum'' thickness of your resist.
+#*For dry etch or wet etch processes, investigate the resist etch rate of your process, as this might limit the ''minimum'' thickness of your resist.
 #'''Spin Coater''': Do you wish to use a manual spin coater or an automatic spin coater? See a list of spin coaters <u>[[Specific_Process_Knowledge/Lithography/Coaters|here]]</u>.
 #'''Exposure''': Choose which aligner you wish to use, and consider the exposure dose.
-##You can find a list of mask aligners and maskless aligners <u>[[Specific_Process_Knowledge/Lithography/UVExposure|here]]</u>.
+#*You can find a list of mask aligners and maskless aligners <u>[[Specific_Process_Knowledge/Lithography/UVExposure|here]]</u>.
-##You can find information on dose <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist|here]]</u>.
+#*You can find information on dose <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist|here]]</u>.
 #'''Development''': Choose which equipment you wish to use to develop your photoresist from <u>[[Specific_Process_Knowledge/Lithography/Development|this list]]</u>. Remember the development process influences the <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist|exposure dose]]</u>.
 #'''Specify whether you wish to strip or lift-off your resist''': <u>[[Specific_Process_Knowledge/Lithography/Strip|strip]]</u> and <u>[[Specific_Process_Knowledge/Lithography/LiftOff|lift-off]]</u>.